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ISO 21466:2019

ISO 21466:2019 Microbeam analysis – Scanning electron microscopy – Method for evaluating critical dimensions by CD-SEM

CDN $336.00

SKU: ce77522e7369 Category:

Description

This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.

Edition

1

Published Date

2019-12-13

Status

PUBLISHED

Pages

47

Language Detail Icon

English

Format Secure Icon

Secure PDF

Abstract

This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.

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