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B51-14 (R2019) – Boiler, pressure vessel, and pressure piping code

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CSA C22.2 NO. 62841-2-6:22 – Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery — Safety — Part 2-6: Particular requirements for hand-held hammers (Binational standard with UL 62841-2-6)

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CSA C22.2 NO. 62841-2-6:22/A1:24 – Amendment 1:2024 to CSA C22.2 NO. 62841-2-6:22, Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery — Safety — Part 2-6: Particular requirements for hand-held hammers (Binational standard with UL 62841-2-6)

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CAN/CSA-C22.2 NO. 62841-2-5:16 (R2026) – Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery – Safety – Part 2-5: Particular requirements for hand-held circular saws (Bi-national standard with UL 62841-2-5)

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CAN/CSA-C22.2 NO. 62841-2-5:16 (R2026)/A1:26 – Amendment 1:2026 to CAN/CSA-C22.2 NO. 62841-2-5:16, Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery – Safety – Part 2-5: Particular requirements for hand-held circular saws (Bi-national standard with UL 62841-2-5)

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CAN/CSA-C22.2 No. 62841-2-4:15/A1:26 – Amendment 1:2026 (IDT) to CAN/CSA-C22.2 No. 62841-2-4:15, Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery — Safety — Part 2-4: Particular requirements for hand-held sanders and polishers other than disc type (Bi-national standard with UL 62841-2-4)

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CAN/CSA-C22.2 NO. 62841-2-4:15 (R2025) – Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery — Safety — Part 2-4: Particular requirements for hand-held sanders and polishers other than disc type (Bi-national standard with UL 62841-2-4)

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CSA C22.2 NO. 62841-2-3:21/A1:26 – Amendment 1:2026 to CSA C22.2 No. 62841-2-3:21, Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery — Safety — Part 2-3: Particular requirements for handheld grinders, disc-type polishers and disc-type sanders (Binational standard with UL 62841-2-3)

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CSA C22.2 NO. 62841-2-23:25 – Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery — Safety — Part 2-23: Particular requirements for hand-held die grinders and small rotary tools (Binational standard with IEC 62841-2-23)

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CAN/CSA-C22.2 NO. 62841-2-21:18/A1:26 – Amendment 1:2026 to CAN/CSA-C22.2 No. 62841-2-21:18, Electric motor-operated hand-held tools, transportable tools and lawn and garden machinery – Safety – Part 2-21: Particular requirement for hand-held drain cleaners (Adopted amendment 1:2024 to IEC 62841-2-21)

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ISO 5618:2024

ISO 5618:2024 Fine ceramics (advanced ceramics, advanced technical ceramics) – Test method for GaN crystal surface defects – Part 2: Method for determining etch pit density

CDN $259.00

SKU: 6fc315b812c2 Categories: , , , ,

Description

This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.

It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.

It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.

Edition

1

Published Date

2024-04-30

Status

PUBLISHED

Pages

25

Language Detail Icon

English

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Abstract

This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.

It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.

It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.

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