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B51-14 (R2019) – Boiler, pressure vessel, and pressure piping code

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ISO 17560:2014

ISO 17560:2014 Surface chemical analysis – Secondary-ion mass spectrometry – Method for depth profiling of boron in silicon

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Description

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 √ó 1016 atoms/cm3 and 1 √ó 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Edition

2

Published Date

2014-09-10

Status

PUBLISHED

Pages

10

Language Detail Icon

English

Format Secure Icon

Secure PDF

Abstract

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 √ó 1016 atoms/cm3 and 1 √ó 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

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