ISO 14706:2014
ISO 14706:2014 Surface chemical analysis – Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
CDN $263.00
Description
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 √ó 1010 atoms/cm2 to 1 √ó 1014 atoms/cm2; contamination elements with atomic surface densities from 5 √ó 108 atoms/cm2 to 5 √ó 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
Edition
2
Published Date
2014-07-25
Status
PUBLISHED
Pages
25
Language
English
Format
Secure PDF
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Abstract
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 √ó 1010 atoms/cm2 to 1 √ó 1014 atoms/cm2; contamination elements with atomic surface densities from 5 √ó 108 atoms/cm2 to 5 √ó 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
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