ISO 14237:2010
ISO 14237:2010 Surface chemical analysis – Secondary-ion mass spectrometry – Determination of boron atomic concentration in silicon using uniformly doped materials
CDN $263.00
Description
ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.
Edition
2
Published Date
2010-07-09
Status
PUBLISHED
Pages
19
Language
English
Format
Secure PDF
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Abstract
ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.
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