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ISO 14237:2010

ISO 14237:2010 Surface chemical analysis – Secondary-ion mass spectrometry – Determination of boron atomic concentration in silicon using uniformly doped materials

CDN $259.00

Description

ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.

Edition

2

Published Date

2010-07-09

Status

PUBLISHED

Pages

19

Language Detail Icon

English

Format Secure Icon

Secure PDF

Abstract

ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.

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