ISO 17560:2014
ISO 17560:2014 Surface chemical analysis – Secondary-ion mass spectrometry – Method for depth profiling of boron in silicon
CDN $131.00
Description
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 √ó 1016 atoms/cm3 and 1 √ó 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Edition
2
Published Date
2014-09-10
Status
PUBLISHED
Pages
10
Language
English
Format
Secure PDF
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Abstract
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 √ó 1016 atoms/cm3 and 1 √ó 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
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