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ISO 23812:2009
ISO 23812:2009 Surface chemical analysis – Secondary-ion mass spectrometry – Method for depth calibration for silicon using multiple delta-layer reference materials
CDN $233.00
Description
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Edition
1
Published Date
2009-04-08
Status
PUBLISHED
Pages
19
Language
English
Format
Secure PDF
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Abstract
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
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